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Over 1.0 kV GaN p―n junction diodes on free-standing GaN substratesNOMOTO, Kazuki; HATAKEYAMA, Yoshitomo; KATAYOSE, Hideo et al.Physica status solidi. A, Applications and materials science (Print). 2011, Vol 208, Num 7, pp 1535-1537, issn 1862-6300, 3 p.Article

Characteristics of threading dislocations in ZnO grown on facet-controlled epitaxial overgrown GaN templatesZHOU, H. L; CHUA, S. J; CHOW, S. Y et al.Journal of physics. Condensed matter (Print). 2007, Vol 19, Num 35, issn 0953-8984, 356203.1-356203.6Article

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High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphireDAEHONG MIN; GEUNHO YOO; SEUNGHWAN MOON et al.Journal of crystal growth. 2014, Vol 387, pp 86-90, issn 0022-0248, 5 p.Article

Free-standing zinc-blende (cubic) GaN layers and substratesNOVIKOV, S. V; STANTON, N. M; CAMPION, R. P et al.Journal of crystal growth. 2008, Vol 310, Num 17, pp 3964-3967, issn 0022-0248, 4 p.Conference Paper

An evaluation of the growth of nitrides on semipolar substrates using two indicatorsGIL, Bernard; BIGENWALD, Pierre; BRIOT, Olivier et al.Physica status solidi. Rapid research letters (Print). 2007, Vol 1, Num 6, pp 268-270, issn 1862-6254, 3 p.Article

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Study on the luminescence properties of n-ZnO/i-NiO/n-GaN isotype heterojunction diodesHUI WANG; ZHIFENG SHI; BAOLIN ZHANG et al.Journal of luminescence. 2013, Vol 135, pp 160-163, issn 0022-2313, 4 p.Article

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiationMORAWIEC, Seweryn; SARZALA, Robert P; NAKWASKI, Włodzimierz et al.Applied physics. A, Materials science & processing (Print). 2013, Vol 113, Num 3, pp 801-809, issn 0947-8396, 9 p.Article

Chemical Vapor Deposition of Diamond Films on Patterned GaN Substrates via a Thin Silicon Nitride Protective LayerZOU, Y. S; YANG, Y; CHONG, Y. M et al.Crystal growth & design. 2008, Vol 8, Num 5, pp 1770-1773, issn 1528-7483, 4 p.Article

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Reduction of internal loss and threshold current in a laser diode with a ridge by selective re-growth (RiS-LD)KURAMOTO, M; SASAOKA, C; FUTAGAWA, N et al.Physica status solidi. A. Applied research. 2002, Vol 192, Num 2, pp 329-334, issn 0031-8965Conference Paper

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In_xGa_(1-x)N/In_yGa_(1-y)N superlattices grown on GaN filmsNAKAMURA, S; MUKAI, T; SENOH, M et al.Journal of applied physics. 1993, Vol 74, Num 6, pp 3911-3915, issn 0021-8979Article

Examination of growth rate during hydride vapor phase epitaxy of GaN on ammonothermal GaN seedsSOCHACKI, T; AMILUSIK, M; FIJALKOWSKI, M et al.Journal of crystal growth. 2014, Vol 407, pp 52-57, issn 0022-0248, 6 p.Article

Rapid Growth of m-plane Oriented Gallium Nitride Nanoplates on Silicon Substrate Using Laser-Assisted Metal Organic Chemical Vapor DepositionTHIRUGNANAM, P; XIONG, W; LU, Y. F et al.Crystal growth & design. 2013, Vol 13, Num 7, pp 3171-3176, issn 1528-7483, 6 p.Article

Effect of piezoelectric constants in electronic structures of InGaN quantum dotsHONG, K. B; KUO, M. K.Semiconductor science and technology. 2013, Vol 28, Num 10, issn 0268-1242, 105006.1-105006.7Article

Modeling of temperature sensor built on GaN nanostructuresASGARI, A; TAHERI, S.Physica. E, low-dimentional systems and nanostructures. 2011, Vol 43, Num 5, pp 1091-1094, issn 1386-9477, 4 p.Article

Single Excitons in InGaN Quantum Dots on GaN Pyramid ArraysHSU, Chih-Wei; LUNDSKOG, Anders; FREDRIK KARLSSON, K et al.Nano letters (Print). 2011, Vol 11, Num 6, pp 2415-2418, issn 1530-6984, 4 p.Article

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Are AIN and GaN substrates useful for the growth of non-polar nitride films for UV emission? The oscillator strength perspectiveBHATTACHARYYA, Jayeeta; GHOSH, Sandip; GRAHN, Holger T et al.Physica status solidi. B. Basic research. 2009, Vol 246, Num 6, pp 1184-1187, issn 0370-1972, 4 p.Conference Paper

Applications and materials. Liquid phase deposited silicon oxide applications and materials s with lower boron impurity grown on gallium nitride by temperature-difference methodLEE, Ming-Kwei; HO, Chen-Lin; ZENG, Jia-Yi et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 2, pp 231-234, issn 1862-6300, 4 p.Article

Spectral measurements and simulations of 405 nm (Al, In)GaN test laser structures grown on SiC and GaN substratesMEYER, Tobias; BRAUN, Harald; SCHWARZ, Ulrich T et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 699708.1-699708.12, issn 0277-786X, isbn 978-0-8194-7195-6Conference Paper